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Grafen Katkılı PVA Ara Yüzey Tabakalı Metal/Yarı İletken Yapıların Hazırlanması ve Dielektrik Özelliklerinin İncelenmesi

Year 2020, Volume: 1 Issue: 1-2, 144 - 153, 30.12.2020

Seçkin Altındal Yerişkin Yasemin Şafak Asar

https://doi.org/10.5281/zenodo.4398959

Abstract

Bu çalışmada, Al/(%5 Gr-PVA)/p-Si (MPS) kapasitörler hazırlanarak dielektrik özellikleri, oda
sıcaklığında ve geniş bir voltaj aralığında ölçülen kapasitans-voltaj (C-V) ve kondüktans-voltaj (G/-V)
ölçümleri kullanılarak yeterince düşük (1 kHz) ve yüksek (1 MHz) olmak üzere iki farklı frekansta incelendi.
Ölçülen C-V ve G/-V eğrilerinden elde edilen '-V ve ''-V eğrilerinin de tıpkı onlar gibi sırasıyla yığılım
(-6V/-2V), tükenim (-2V/2V), ve terslenim (1.5V/6V) bölgelerine sahip olduğu gözlendi. Kompleks dielektrik
sabitinin gerçek (’) ve sanal ('') kısımlarının hem frekansa hem de voltaja bağlı olduğu ve bu bağlılığın
özellikle tükenim ve yığılım bölgelerinde daha belirginleştiği saptandı. Hem ' hem de '' değerlerinde
frekans ve voltaja bağlı saptanan değişimler, özellikle hazırlanan aygıtın seri direncine (Rs), (%5 GrPVA)/p-Si oluşan arayüzey durumlarına (Nss) ve yüzey/dipol polarizasyonuna atfedildi. Bu Nss değerleri ve
polarizasyon, düşük-orta frekanslarda ölçülen C ve G değerlerine ve dolayısıyla da ' ile '' değerlerine
ilave bir katkı getirmektedir. Özellikle düşük frekanslarda elde edilen yüksek ' ve '' değerleri, bize,
kullanılan (Gr-PVA) polimer arayüzey tabakanın geleneksel yalıtkanlar yerine başarıyla kullanılabileceği
ve MPS kapasitörlerde daha fazla yük/enerji depolanabileceğini göstermektedir.

Keywords

Al/(%5 Gr-PVA)/p-Si (MPS)yapılar/kapasitörler C-V ve G/-V ölçümleri Seri direnç ve arayüzey durumlarının dielektrik karakteristikleri üzerine etkisi

References

  • [1] Sze, S. M. and Kwok, K. N. (2007). Physics of Semiconductor Devices (3 rd ed.). New Jersey: John Wiley & Sons, 362-390.
  • [2] Rhoderick, E. H. and Williams, R. H. (1988). Metal Semiconductor Contacts (2nd ed.). Oxford: Oxford Press, 257-264.
  • [3] Sharma, B. L. (1984). Metal-Semiconductor Schottky Barrier Junctions and Their Applications (1st ed.). New York: Plenum Press, 55-175.
  • [4] Mott, N. F. (1938). Note on the contact between a metal and an insulator or semiconductor. Proceedings of the Cambridge Philosophical Society, 34, 568-572.
  • [5] Cowley, A. M. and Sze, S. M. (1965). Surface state and barrier height of metal semiconductor systems. Journal of Applied Physics, 36(10), 3212-3221.
  • [6] Tung, R. T. (2001). Recent advances in Schottky barrier concepts. Materials Science & Engineering R-Reports, 35 (1-3), 1-138.
  • [7] Card, H. C. and Rhoderick, E. H. (1973). The effect of an interfacial layer on minority carrier injection in forward-biased silicon Schottky diodes. Solid-State Electronics, 16 (3), 365-374.
  • [8] Nicollian, E. H. and Brews, J. R. (1982). Metal Oxide Semiconductor (MOS) Physics and Technology. New York: Wiley, 186-330.
  • [9] Parlakturk, F., Altındal, Ş., Tataroglu, A., Parlak, M., and Agasiev, A. (2008). On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si (MIS) structures. Microelectronic Enineering, 85, 81-88.
  • [10] Türk, Ç. G., Tan, S. O., Altındal, Ş., İnem, B. (2020). Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage. Physica B: Physics of Condensed Matter, 582, 411979.
  • [11] Akın, B. and Altındal, Ş. (2020). On the frequency and voltage-dependent main electrical parameters of the Au/ZnO/n-GaAs structures at room temperature by using various methods. Physica B: Physics of Condensed Matter, 594, 412274.
  • [12] Kaya, A., Alialy, S., Demirezen, S., Balbaşı, M., Yerişkin, S. A. and Aytimur, A. (2016). The investigation of dielectric properties and ac conductivity of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors using impedance spectroscopy method. Ceramics International, 42, 3322-3329.
  • [13] Altindal Yerişkin, S. (2019). The investigation of effects of (Fe2O4-PVP) organic interlayer, surface states, and series resistance on the electrical characteristics and sources of them. Journal of Materials Science: Materials in Electronics, 30, 17032-17039.
  • [14] Demirezen, S. (2019). The role of interface traps, series resistance and (Ni-doped PVA) interlayer effects on electrical characteristics in Al/p-Si (MS) structures. Journal of Materials Science: Materials in Electronics, 30 19854- 19861.
  • [15] Lee, J. S., Choi, K. H., Ghim, H. D., Kim, S. S., Chun, D. H., Kim, H. Y., and Lyoo, W. S. (2004). Role of molecular weight of atactic poly(vinyl alchol) (PVA) in the structure and properties of PVA nanofabric prepared by electrospinning. Journal of Applied Polymer Science, 93, 1638-1646.
  • [16] Bilkan, Ç. Altındal, Ş., and Azizian-Kalandaragh, Y. (2017). Investigation of frequency and voltage dependence surface states and series resistance profiles using admittance measurements in Al/p-Si with Co3O4-PVA interlayer. Physica B: Condensed Matter, 515,28-33.
  • [17] Demirezen, S. Orak, I., Azizian-Kalandaragh, Y., and Altındal, Ş. (2017). Series resistance and interface states effects on the C–V and G/–V characteristics in Au/(Co3O4-doped PVA)/n-Si structures at room temperature. Journal of Materials Science: Materials in Electronics, 28, 12967-12976.
  • [18] Alptekin, S. and Altındal, Ş. (2020). Electrical characteristics of Au/PVP/n‑Si structures using admittance measurements between 1 and 500 kHz. Journal of Materials Science: Materials in Electronics, 31, 13337-13343.
  • [19] Sharma, M. and Tripathi, S. K. (2016). Frequency and voltage dependence of admittance characteristics of Al/Al2O3/PVA:n-ZnSe Schottky barrier diodes. Materials Science and Semiconductor Process, 41, 155-161.
  • [20] Altındal Yerişkin, S., Balbaşı, M. and Orak, İ. (2017). The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature. Journal of Materials Science: Materials in Electronics, 28, 14040-14048.
  • [21] Karadaş, S., Altındal Yerişkin, S., Balbaşı, M., and Azizian-Kalandaragh, Y. (2021). Complex dielectric, complex electric modulus, and electrical conductivity in Al/(Graphene-PVA)/p-Si (metal-polymer-semiconductor) structures. Journal of Physics and Chemistry of Solids, 148, 109740.
  • [22] Özdemir, A.F., Kotan, Z., Aldemir, D.A., and Altındal, S. (2009). The effects of the temperature on I-V and CV characteristics of Al/P2ClAn(C2H5COOH)/p-Si/Al structure. The European Physical Journal Applied Physics, 46, 20402.
  • [23] Jayalakshmi, M. and Balasubrmanian, K. (2008). Simple capacitors to supercapacitors-an overview. International Journal Electrochemistry Science. 3, 1196-1217.
  • [24] Novoselov, K.S., Geim, A.K., Morozov, S.V., Jiang, D., Zhang, Y., Dubonos, S.V., Grigorieva, I.V., and Firsov, A.A. (2004). Electric field effect in atomically thin carbon films. Science, 306, 666-669.
  • [25] Macedo, P.B., Moyniham, C.T., and Bose, R. (1972). Role of ionic diffusion in vitreous ionic conductor. Physics and Chemistry of Glasses, 13, 171-179.
  • [26] Sattar, A.A., and Rahman, S.A., (2003). Dielectric properties of rare earth substituted Cu-Zn ferrites. Physica Status Solidi (A), 200, 415-422.
  • [27] Chelkowski, A., (1980). Dielectric Physics. Amsterdam; New York: Elsevier Scientific Pub. Co, 20-45.
  • [28] Dutta, P., Biswas, S., and De, S. K., (2002). Dielectric relaxation in polyaniline-polyvinyl alcohol composites. Materials Research Bulletin, 37, 193-200.
  • [29] Şafak Asar, Y., Asar, T., Altındal, Ş., and Özçelik, S. (2015). Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO2/p-GaAs(110) MIS structures. Philosophical Magazine, 35, 2885-2898.
  • [30] Yıldız, D. E., Yıldırım, M., and Gökçen, M., (2014). Investigation on dielectric properties of atomic layer deposited Al2O3 dielectric films. Journal of Vacuum Science Technology A, 32, 2014031509.
  • [31] Şafak Asar, Y., Asar, T., Altındal, and Ş., Özçelik, S. (2015). Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs(110) schottky barrier diodes. Journal of Alloys and Compounds, 628, 442-449.

Year 2020, Volume: 1 Issue: 1-2, 144 - 153, 30.12.2020

Seçkin Altındal Yerişkin Yasemin Şafak Asar

https://doi.org/10.5281/zenodo.4398959

Abstract

References

  • [1] Sze, S. M. and Kwok, K. N. (2007). Physics of Semiconductor Devices (3 rd ed.). New Jersey: John Wiley & Sons, 362-390.
  • [2] Rhoderick, E. H. and Williams, R. H. (1988). Metal Semiconductor Contacts (2nd ed.). Oxford: Oxford Press, 257-264.
  • [3] Sharma, B. L. (1984). Metal-Semiconductor Schottky Barrier Junctions and Their Applications (1st ed.). New York: Plenum Press, 55-175.
  • [4] Mott, N. F. (1938). Note on the contact between a metal and an insulator or semiconductor. Proceedings of the Cambridge Philosophical Society, 34, 568-572.
  • [5] Cowley, A. M. and Sze, S. M. (1965). Surface state and barrier height of metal semiconductor systems. Journal of Applied Physics, 36(10), 3212-3221.
  • [6] Tung, R. T. (2001). Recent advances in Schottky barrier concepts. Materials Science & Engineering R-Reports, 35 (1-3), 1-138.
  • [7] Card, H. C. and Rhoderick, E. H. (1973). The effect of an interfacial layer on minority carrier injection in forward-biased silicon Schottky diodes. Solid-State Electronics, 16 (3), 365-374.
  • [8] Nicollian, E. H. and Brews, J. R. (1982). Metal Oxide Semiconductor (MOS) Physics and Technology. New York: Wiley, 186-330.
  • [9] Parlakturk, F., Altındal, Ş., Tataroglu, A., Parlak, M., and Agasiev, A. (2008). On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si (MIS) structures. Microelectronic Enineering, 85, 81-88.
  • [10] Türk, Ç. G., Tan, S. O., Altındal, Ş., İnem, B. (2020). Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage. Physica B: Physics of Condensed Matter, 582, 411979.
  • [11] Akın, B. and Altındal, Ş. (2020). On the frequency and voltage-dependent main electrical parameters of the Au/ZnO/n-GaAs structures at room temperature by using various methods. Physica B: Physics of Condensed Matter, 594, 412274.
  • [12] Kaya, A., Alialy, S., Demirezen, S., Balbaşı, M., Yerişkin, S. A. and Aytimur, A. (2016). The investigation of dielectric properties and ac conductivity of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors using impedance spectroscopy method. Ceramics International, 42, 3322-3329.
  • [13] Altindal Yerişkin, S. (2019). The investigation of effects of (Fe2O4-PVP) organic interlayer, surface states, and series resistance on the electrical characteristics and sources of them. Journal of Materials Science: Materials in Electronics, 30, 17032-17039.
  • [14] Demirezen, S. (2019). The role of interface traps, series resistance and (Ni-doped PVA) interlayer effects on electrical characteristics in Al/p-Si (MS) structures. Journal of Materials Science: Materials in Electronics, 30 19854- 19861.
  • [15] Lee, J. S., Choi, K. H., Ghim, H. D., Kim, S. S., Chun, D. H., Kim, H. Y., and Lyoo, W. S. (2004). Role of molecular weight of atactic poly(vinyl alchol) (PVA) in the structure and properties of PVA nanofabric prepared by electrospinning. Journal of Applied Polymer Science, 93, 1638-1646.
  • [16] Bilkan, Ç. Altındal, Ş., and Azizian-Kalandaragh, Y. (2017). Investigation of frequency and voltage dependence surface states and series resistance profiles using admittance measurements in Al/p-Si with Co3O4-PVA interlayer. Physica B: Condensed Matter, 515,28-33.
  • [17] Demirezen, S. Orak, I., Azizian-Kalandaragh, Y., and Altındal, Ş. (2017). Series resistance and interface states effects on the C–V and G/–V characteristics in Au/(Co3O4-doped PVA)/n-Si structures at room temperature. Journal of Materials Science: Materials in Electronics, 28, 12967-12976.
  • [18] Alptekin, S. and Altındal, Ş. (2020). Electrical characteristics of Au/PVP/n‑Si structures using admittance measurements between 1 and 500 kHz. Journal of Materials Science: Materials in Electronics, 31, 13337-13343.
  • [19] Sharma, M. and Tripathi, S. K. (2016). Frequency and voltage dependence of admittance characteristics of Al/Al2O3/PVA:n-ZnSe Schottky barrier diodes. Materials Science and Semiconductor Process, 41, 155-161.
  • [20] Altındal Yerişkin, S., Balbaşı, M. and Orak, İ. (2017). The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature. Journal of Materials Science: Materials in Electronics, 28, 14040-14048.
  • [21] Karadaş, S., Altındal Yerişkin, S., Balbaşı, M., and Azizian-Kalandaragh, Y. (2021). Complex dielectric, complex electric modulus, and electrical conductivity in Al/(Graphene-PVA)/p-Si (metal-polymer-semiconductor) structures. Journal of Physics and Chemistry of Solids, 148, 109740.
  • [22] Özdemir, A.F., Kotan, Z., Aldemir, D.A., and Altındal, S. (2009). The effects of the temperature on I-V and CV characteristics of Al/P2ClAn(C2H5COOH)/p-Si/Al structure. The European Physical Journal Applied Physics, 46, 20402.
  • [23] Jayalakshmi, M. and Balasubrmanian, K. (2008). Simple capacitors to supercapacitors-an overview. International Journal Electrochemistry Science. 3, 1196-1217.
  • [24] Novoselov, K.S., Geim, A.K., Morozov, S.V., Jiang, D., Zhang, Y., Dubonos, S.V., Grigorieva, I.V., and Firsov, A.A. (2004). Electric field effect in atomically thin carbon films. Science, 306, 666-669.
  • [25] Macedo, P.B., Moyniham, C.T., and Bose, R. (1972). Role of ionic diffusion in vitreous ionic conductor. Physics and Chemistry of Glasses, 13, 171-179.
  • [26] Sattar, A.A., and Rahman, S.A., (2003). Dielectric properties of rare earth substituted Cu-Zn ferrites. Physica Status Solidi (A), 200, 415-422.
  • [27] Chelkowski, A., (1980). Dielectric Physics. Amsterdam; New York: Elsevier Scientific Pub. Co, 20-45.
  • [28] Dutta, P., Biswas, S., and De, S. K., (2002). Dielectric relaxation in polyaniline-polyvinyl alcohol composites. Materials Research Bulletin, 37, 193-200.
  • [29] Şafak Asar, Y., Asar, T., Altındal, Ş., and Özçelik, S. (2015). Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO2/p-GaAs(110) MIS structures. Philosophical Magazine, 35, 2885-2898.
  • [30] Yıldız, D. E., Yıldırım, M., and Gökçen, M., (2014). Investigation on dielectric properties of atomic layer deposited Al2O3 dielectric films. Journal of Vacuum Science Technology A, 32, 2014031509.
  • [31] Şafak Asar, Y., Asar, T., Altındal, and Ş., Özçelik, S. (2015). Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs(110) schottky barrier diodes. Journal of Alloys and Compounds, 628, 442-449.
There are 31 citations in total.

Details

Primary Language Turkish
Journal Section Araştırma Makaleleri
Authors

Seçkin Altındal Yerişkin

Yasemin Şafak Asar This is me

Publication Date December 30, 2020
Published in Issue Year 2020 Volume: 1 Issue: 1-2

Cite

APA Altındal Yerişkin, S., & Şafak Asar, Y. (2020). Grafen Katkılı PVA Ara Yüzey Tabakalı Metal/Yarı İletken Yapıların Hazırlanması ve Dielektrik Özelliklerinin İncelenmesi. Gazi Üniversitesi Fen Fakültesi Dergisi, 1(1-2), 144-153. https://doi.org/10.5281/zenodo.4398959
AMA Altındal Yerişkin S, Şafak Asar Y. Grafen Katkılı PVA Ara Yüzey Tabakalı Metal/Yarı İletken Yapıların Hazırlanması ve Dielektrik Özelliklerinin İncelenmesi. GÜFFD. December 2020;1(1-2):144-153. doi:10.5281/zenodo.4398959
Chicago Altındal Yerişkin, Seçkin, and Yasemin Şafak Asar. “Grafen Katkılı PVA Ara Yüzey Tabakalı Metal/Yarı İletken Yapıların Hazırlanması Ve Dielektrik Özelliklerinin İncelenmesi”. Gazi Üniversitesi Fen Fakültesi Dergisi 1, no. 1-2 (December 2020): 144-53. https://doi.org/10.5281/zenodo.4398959.
EndNote Altındal Yerişkin S, Şafak Asar Y (December 1, 2020) Grafen Katkılı PVA Ara Yüzey Tabakalı Metal/Yarı İletken Yapıların Hazırlanması ve Dielektrik Özelliklerinin İncelenmesi. Gazi Üniversitesi Fen Fakültesi Dergisi 1 1-2 144–153.
IEEE S. Altındal Yerişkin and Y. Şafak Asar, “Grafen Katkılı PVA Ara Yüzey Tabakalı Metal/Yarı İletken Yapıların Hazırlanması ve Dielektrik Özelliklerinin İncelenmesi”, GÜFFD, vol. 1, no. 1-2, pp. 144–153, 2020, doi: 10.5281/zenodo.4398959.
ISNAD Altındal Yerişkin, Seçkin - Şafak Asar, Yasemin. “Grafen Katkılı PVA Ara Yüzey Tabakalı Metal/Yarı İletken Yapıların Hazırlanması Ve Dielektrik Özelliklerinin İncelenmesi”. Gazi Üniversitesi Fen Fakültesi Dergisi 1/1-2 (December 2020), 144-153. https://doi.org/10.5281/zenodo.4398959.
JAMA Altındal Yerişkin S, Şafak Asar Y. Grafen Katkılı PVA Ara Yüzey Tabakalı Metal/Yarı İletken Yapıların Hazırlanması ve Dielektrik Özelliklerinin İncelenmesi. GÜFFD. 2020;1:144–153.
MLA Altındal Yerişkin, Seçkin and Yasemin Şafak Asar. “Grafen Katkılı PVA Ara Yüzey Tabakalı Metal/Yarı İletken Yapıların Hazırlanması Ve Dielektrik Özelliklerinin İncelenmesi”. Gazi Üniversitesi Fen Fakültesi Dergisi, vol. 1, no. 1-2, 2020, pp. 144-53, doi:10.5281/zenodo.4398959.
Vancouver Altındal Yerişkin S, Şafak Asar Y. Grafen Katkılı PVA Ara Yüzey Tabakalı Metal/Yarı İletken Yapıların Hazırlanması ve Dielektrik Özelliklerinin İncelenmesi. GÜFFD. 2020;1(1-2):144-53.
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