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Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer

Yıl 2018, Cilt: 2 Sayı: 2, 116 - 122, 28.12.2018

Abdulkerim Karabulut İkram Orak Abdülmecit Türüt

https://doi.org/10.32571/ijct.456902
Cited By: 22

Öz

We have fabricated,
metal-insulator-semiconductor (MIS) structures, the Au/Ti/HfO2/n-GaAs. Metal rectifying contacts were
made by dc magnetron sputtering technique, and hafnium
dioxide (HfO2) interfacial
insulating layer with 3, 5 and 10 nm thickness has been formed by the atomic
layer depositon (ALD) technique.
The series resistance value from the forward bias current-voltage (I-V) curves of 3 nm and 5 nm MIS structures very slightly has reduced
with a decrease in the measurement temperature. The barrier height value from I-V characteristics increased with increasing HfO2 layer thickness. The
barrier increment in the rectifying contacts is very important for an adequate
barrier height in FET operation and is useful for the gates of the metal-semiconductor
field-effect transistors
or also show promise as small signal zero-bias rectifiers and microwave mixers.




Anahtar Kelimeler

Metal-Oxide-semiconductor structures GaAs semiconductor Hafnia HfO2 Atomic layer deposition (ALD) technique

Kaynakça

  • 1. Rhoderick, E.H.; Williams, R.H. Metal-Semiconductor Contacts, Clerandon Press, Oxford University Press, 1988.
  • 2. Mönch, W. Electronics Properties of Semiconductor Interfaces, Springer-Verlag, Berlin Heidelberg, 2004.
  • 3. Sze, S.M. Physics of Semiconductor Devices, Second Ed. Willey, New York, 1981.
  • 4. Colinge, J.P., Colinge, C.A. Physics of Semiconductor Devices, Kluwer Academic Publishers, New York, 2002.
  • 5. Mo Wu, Alivov, Y.I.; Morkoc¸ H. J. Mater. Sci- Mater. El. 2008, 19, 915–951.
  • 6. Missoum, I.; Ocak, Y.S., Benhaliliba, M., Benouis, C.E., Chaker, A. Synthetic Met. 2016, 214, 76.
  • 7. Cheong, K.Y.; Moon, J.H.; Kim, H.J., Bahng, W.; Kim, N.K. J. Appl. Phys. 2008, 103, 084113.
  • 8. Reddy, V.R.; Manjunath, V.; Janardhanam, V.; Kil, Y.H.; Choi, C-J. J. Electron. Mater. 2014, 43(9) 3499.
  • 9. Turut, A. Karabulut, A.; Ejderha, K.; Bıyıklı, N. Mater. Res. Express 2015, 2, 046301.
  • 10. Pan, T.M.; Lee, J.D.; Shu, W-H.; Chen, T.T. Appl. Phys. Lett. 2006, 89, 232908.
  • 11. Cheung, S.K.; Cheung, N.W. Appl. Phys. Lett. 1986, 49, 85.
  • 12. Kumar, R.; Chand, S. J. Electron. Mater. 2015, 44(1), 194.
  • 13. E. E. Tanrıkulu, D. E. Yıldız, A. Günen, Ş. Altındal, Phys. Scripta 2015, 90, 095801.
  • 14. Huang, W.C.; Linb, T.C.; Horng, C.T., Li, YH. Mat. Sci. Semicon. Proc. 2013, 16, 418-423
  • 15. A. Gümüş and Ş. Altındal, Mat. Sci. Semicon. Proc. 2014, 28, 66-71.
  • 16. Martens, K.; Wang, W.F.; Dimoulas, A.; Borghs, G.; Meuris, M.; Groseneken, G.; Maes, H.E. Solid State Electron. 2007, 51, 1101.
  • 17. Korucu, D., Duman, S. Thin Solid Films 2013, 531, 436.
  • 18. Jyothi, I.; Janardhanam, V; Hong, H.; Choi, C.J. Mat. Sci. Semicon. Proc. 2015, 39, 390.
  • 19. Özden, Ş.; Tozlu C;. Pakma, O. Int. J. Photoenergy 2016, 2016, 6157905.
  • 20. Chen J., Wang, Lv, Q. J.; Tang H.; Li, X.; J. Alloy. Compd. 2015, 649, 1220-1225.
  • 21. Guzel, A.; Duman, S.; Yıldırım, N.; Turut, A. J. Electron. Mater. 2016, 45(6), 2808.
  • 22. Kaushal, P.; Chand, S. Intern. J. Electron. 2016, 103(6), 937.
  • 23. Asubay, S.; Genisel M.F.; Ocak, Y.S. Mater. Sci. Semicon. Proc. 2014, 28, 94.
  • 24. Zizeng, L.; Mingmin, C.; Shengkai, W.; Qi, L.; Gongli, X.; Honggang L.; Haiou, L. J. Semicond. 2016, 37, 026002.
  • 25. Morrison, D.J.; Wright, N.G.; Horsfall, A.B.; Johnson, C.M.; OÕNeill, A.G.; Knights, A.P.; Hilton, K.P.; Uren, M.J. Solid State Electron. 2000, 44, 1879.
  • 26. Osvald, J.; Horvath, Zs.J. Appl. Surf. Sci. 2004, 234, 349.
  • 27. Kavasoglu, N.; Kavasoglu, A.S.; Metin, B. Mater. Res. Bull. 2015, 70, 804.
  • 28. Rahmatallahpur Sh.; Yegane, M. Physica B: Conden.Matter. 2011, 406, 1351-1356.
  • 29. Sekhar, M.C.; Reddy, N.N.K.; Verma, V.K., Uthanna, S. Ceram. Int. 2016, 42, 18870.
  • 30. Sani, N.; Wang, X.; Granberg, H.; Ersman, P.A.; Crispin, X.; Dyreklev, P.; Engquist, I.; Gustafsson, G.; Berggren, M. Sci. Rep. 2016, 6, 28921.
  • 31. Duman, S.; Turgut, G.; Ozcelik, F.S.; Gurbulak, B. Philos. Mag. 2015, 95, 1646-1655.
  • 32. Deniz, A.R; Çaldıran, Z.; Metin, Ö.; Meral, K.; Aydoğan, Ş.; J. Colloid Interf. Sci. 2016, 473, 172.
  • 33. Mönch, W. Mat. Sci. Semicon. Proc. 2014, 28, 2–12.
  • 34. Turut, A.; Ejderha, K.; Yildirim, N.; Abay, B. J. Semicond. 2016, 37(4), 044001.
  • 35. Eglash, S.J.; Newman, N.; Pan, S.; Mo, D.; Shenai, K.; Spicer, W.E.; Ponce F.A.; Collins, D.M. J. Appl. Phys. 1987, 61, 5159.
  • 36. Turut, A.; Bati, B.; Kȍkçe, A.; Sağlam, M.; Yalçin, N. Phys. Scripta 1996, 53, 118.

Yıl 2018, Cilt: 2 Sayı: 2, 116 - 122, 28.12.2018

Abdulkerim Karabulut İkram Orak Abdülmecit Türüt

https://doi.org/10.32571/ijct.456902
Cited By: 22

Öz

Kaynakça

  • 1. Rhoderick, E.H.; Williams, R.H. Metal-Semiconductor Contacts, Clerandon Press, Oxford University Press, 1988.
  • 2. Mönch, W. Electronics Properties of Semiconductor Interfaces, Springer-Verlag, Berlin Heidelberg, 2004.
  • 3. Sze, S.M. Physics of Semiconductor Devices, Second Ed. Willey, New York, 1981.
  • 4. Colinge, J.P., Colinge, C.A. Physics of Semiconductor Devices, Kluwer Academic Publishers, New York, 2002.
  • 5. Mo Wu, Alivov, Y.I.; Morkoc¸ H. J. Mater. Sci- Mater. El. 2008, 19, 915–951.
  • 6. Missoum, I.; Ocak, Y.S., Benhaliliba, M., Benouis, C.E., Chaker, A. Synthetic Met. 2016, 214, 76.
  • 7. Cheong, K.Y.; Moon, J.H.; Kim, H.J., Bahng, W.; Kim, N.K. J. Appl. Phys. 2008, 103, 084113.
  • 8. Reddy, V.R.; Manjunath, V.; Janardhanam, V.; Kil, Y.H.; Choi, C-J. J. Electron. Mater. 2014, 43(9) 3499.
  • 9. Turut, A. Karabulut, A.; Ejderha, K.; Bıyıklı, N. Mater. Res. Express 2015, 2, 046301.
  • 10. Pan, T.M.; Lee, J.D.; Shu, W-H.; Chen, T.T. Appl. Phys. Lett. 2006, 89, 232908.
  • 11. Cheung, S.K.; Cheung, N.W. Appl. Phys. Lett. 1986, 49, 85.
  • 12. Kumar, R.; Chand, S. J. Electron. Mater. 2015, 44(1), 194.
  • 13. E. E. Tanrıkulu, D. E. Yıldız, A. Günen, Ş. Altındal, Phys. Scripta 2015, 90, 095801.
  • 14. Huang, W.C.; Linb, T.C.; Horng, C.T., Li, YH. Mat. Sci. Semicon. Proc. 2013, 16, 418-423
  • 15. A. Gümüş and Ş. Altındal, Mat. Sci. Semicon. Proc. 2014, 28, 66-71.
  • 16. Martens, K.; Wang, W.F.; Dimoulas, A.; Borghs, G.; Meuris, M.; Groseneken, G.; Maes, H.E. Solid State Electron. 2007, 51, 1101.
  • 17. Korucu, D., Duman, S. Thin Solid Films 2013, 531, 436.
  • 18. Jyothi, I.; Janardhanam, V; Hong, H.; Choi, C.J. Mat. Sci. Semicon. Proc. 2015, 39, 390.
  • 19. Özden, Ş.; Tozlu C;. Pakma, O. Int. J. Photoenergy 2016, 2016, 6157905.
  • 20. Chen J., Wang, Lv, Q. J.; Tang H.; Li, X.; J. Alloy. Compd. 2015, 649, 1220-1225.
  • 21. Guzel, A.; Duman, S.; Yıldırım, N.; Turut, A. J. Electron. Mater. 2016, 45(6), 2808.
  • 22. Kaushal, P.; Chand, S. Intern. J. Electron. 2016, 103(6), 937.
  • 23. Asubay, S.; Genisel M.F.; Ocak, Y.S. Mater. Sci. Semicon. Proc. 2014, 28, 94.
  • 24. Zizeng, L.; Mingmin, C.; Shengkai, W.; Qi, L.; Gongli, X.; Honggang L.; Haiou, L. J. Semicond. 2016, 37, 026002.
  • 25. Morrison, D.J.; Wright, N.G.; Horsfall, A.B.; Johnson, C.M.; OÕNeill, A.G.; Knights, A.P.; Hilton, K.P.; Uren, M.J. Solid State Electron. 2000, 44, 1879.
  • 26. Osvald, J.; Horvath, Zs.J. Appl. Surf. Sci. 2004, 234, 349.
  • 27. Kavasoglu, N.; Kavasoglu, A.S.; Metin, B. Mater. Res. Bull. 2015, 70, 804.
  • 28. Rahmatallahpur Sh.; Yegane, M. Physica B: Conden.Matter. 2011, 406, 1351-1356.
  • 29. Sekhar, M.C.; Reddy, N.N.K.; Verma, V.K., Uthanna, S. Ceram. Int. 2016, 42, 18870.
  • 30. Sani, N.; Wang, X.; Granberg, H.; Ersman, P.A.; Crispin, X.; Dyreklev, P.; Engquist, I.; Gustafsson, G.; Berggren, M. Sci. Rep. 2016, 6, 28921.
  • 31. Duman, S.; Turgut, G.; Ozcelik, F.S.; Gurbulak, B. Philos. Mag. 2015, 95, 1646-1655.
  • 32. Deniz, A.R; Çaldıran, Z.; Metin, Ö.; Meral, K.; Aydoğan, Ş.; J. Colloid Interf. Sci. 2016, 473, 172.
  • 33. Mönch, W. Mat. Sci. Semicon. Proc. 2014, 28, 2–12.
  • 34. Turut, A.; Ejderha, K.; Yildirim, N.; Abay, B. J. Semicond. 2016, 37(4), 044001.
  • 35. Eglash, S.J.; Newman, N.; Pan, S.; Mo, D.; Shenai, K.; Spicer, W.E.; Ponce F.A.; Collins, D.M. J. Appl. Phys. 1987, 61, 5159.
  • 36. Turut, A.; Bati, B.; Kȍkçe, A.; Sağlam, M.; Yalçin, N. Phys. Scripta 1996, 53, 118.
Toplam 37 adet kaynakça vardır.

Ayrıntılar

Birincil Dil İngilizce
Konular Mühendislik
Bölüm Makale
Yazarlar

Abdulkerim Karabulut 0000-0003-1694-5458

İkram Orak 0000-0003-2318-9718

Abdülmecit Türüt 0000-0002-4664-4528

Yayımlanma Tarihi 28 Aralık 2018
Yayımlandığı Sayı Yıl 2018 Cilt: 2 Sayı: 2

Kaynak Göster

APA Karabulut, A., Orak, İ., & Türüt, A. (2018). Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer. International Journal of Chemistry and Technology, 2(2), 116-122. https://doi.org/10.32571/ijct.456902
AMA Karabulut A, Orak İ, Türüt A. Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer. Int. J. Chem. Technol. Aralık 2018;2(2):116-122. doi:10.32571/ijct.456902
Chicago Karabulut, Abdulkerim, İkram Orak, ve Abdülmecit Türüt. “Electrical Characteristics of Au/Ti/HfO2/N-GaAs Metal-Insulator-Semiconductor Structures With High-K Interfacial Layer”. International Journal of Chemistry and Technology 2, sy. 2 (Aralık 2018): 116-22. https://doi.org/10.32571/ijct.456902.
EndNote Karabulut A, Orak İ, Türüt A (01 Aralık 2018) Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer. International Journal of Chemistry and Technology 2 2 116–122.
IEEE A. Karabulut, İ. Orak, ve A. Türüt, “Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer”, Int. J. Chem. Technol., c. 2, sy. 2, ss. 116–122, 2018, doi: 10.32571/ijct.456902.
ISNAD Karabulut, Abdulkerim vd. “Electrical Characteristics of Au/Ti/HfO2/N-GaAs Metal-Insulator-Semiconductor Structures With High-K Interfacial Layer”. International Journal of Chemistry and Technology 2/2 (Aralık 2018), 116-122. https://doi.org/10.32571/ijct.456902.
JAMA Karabulut A, Orak İ, Türüt A. Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer. Int. J. Chem. Technol. 2018;2:116–122.
MLA Karabulut, Abdulkerim vd. “Electrical Characteristics of Au/Ti/HfO2/N-GaAs Metal-Insulator-Semiconductor Structures With High-K Interfacial Layer”. International Journal of Chemistry and Technology, c. 2, sy. 2, 2018, ss. 116-22, doi:10.32571/ijct.456902.
Vancouver Karabulut A, Orak İ, Türüt A. Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer. Int. J. Chem. Technol. 2018;2(2):116-22.

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