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TiO2 Ara Katmanlı Si-Tabanlı Heteroeklemin Dielektrik Karakterizasyonu

Yıl 2018, Cilt: 8 Sayı: 3, 119 - 129, 30.09.2018

Öz

Bu çalışmada, Al/TiO2/p-Si/Al heteroeklemi üretildi ve bazı elektrik ve dielektrik karakteristikleri
araştırıldı. TiO2 arayüzey katmanının sentezlenmesi için yüzey düzgünlüğü ve kararlılığı gibi sahip olduğu bazı
avantajlardan dolayı atomik katman kaplama tekniği kullanıldı. Elektriksel ve dielektrik karakteristiklerinin
belirlenmesi için, oda sıcaklığında, -1 ile +1 V beslem voltajı ve 10 kHz-1MHz frekans değerleri aralıklarında
empedans spektroskopisi ölçümleri yapılmıştır. Elektriksel parametreler olarak arayüzey halleri dağılımı ve seri
direnç değerleri belirlenmiştir. Bunlara ek olarak, dielektrik kaybı ve katsayısı, elektriksel modülün gerçek ve
imajiner kısmı ve AC elektrik iletkenliği gibi dielektrik parametrelerin frekansa ve voltaja güçlü bir şekilde bağlı
olduğu bulunmuştur. Elektrik ve dilelektrik karakteristikler üretilen aygıtın arayüzey halleri ve polarizasyon
değerlerinin düşük frekanslarda AC sinyalini takip edebildiğini göstermektedir.

Kaynakça

  • Biyikli N, Karabulut A, Efeolu H, Guzeldir B, Turut A, 2014. Electrical characteristics of Au/Ti/n-GaAs contacts over a wide measurement temperature range. Physica Scripta, 89: 095804.
  • Dang VS, Parala H, Kim JH, Xu K, Srinivasan NB, Edengeiser E, Havenith M, Wieck AD, Arcos T, Fischer RA, Devi A, 2014. Electrical and optical properties of TiO2 thin films prepared by plasma‐enhanced atomic layer deposition. Phys. Status Solidi A, 211: 416-424. Cherif A, Jomni S, Mliki N, Beji L, 2013. Electrical and dielectric characteristics of Al/Dy2O3/p-Si heterostructure. Physica B: Condensed Matter, 429: 79-84.
  • Demirezen S, 2013. Frequency- and voltage-dependent dielectric properties and electrical conductivity of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes at room temperature. Appl. Phys. A. 112: 827–833.
  • Ge J, Chaker M, 2017. Oxygen Vacancies Control Transition of Resistive Switching Mode in Single-Crystal TiO2 Memory Device. ACS Appl. Mater. Interfaces, 9: 16327–16334.
  • Gozeh BA, Karabulut A, Yildiz A, Yakuphanoglu F, 2018. Solar light responsive ZnO nanoparticles adjusted using Cd and La Co-dopant photodetector. Journal of Alloys and Compounds, 732: 16-24.
  • Gupta R, Saikia D, Vaid R, 2017. Argon Annealed ALD-ZrO2/SiON Gate Stack for Advanced CMOS Devices. ECS Transactions, 77: 51-55.
  • Gyanan, Mondal S, Kumar A, 2016. Tunable dielectric properties of TiO2 thin film based MOS systems for application in microelectronics. Superlattices and Microstructures, 100: 876-885.
  • Kalygina VM, Egorova IS, Prudaev IA, Tolbanov OP, Atuchin VV, 2017. Conduction mechanism of metal-TiO2–Si structures. Chin. J. Phys. 55: 59-63.
  • Karabulut A, Orak İ, Türüt A, 2018. The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes. Solid State Electronics, 144: 39-48.
  • Karabulut A, Türüt A, Karataş Ş, 2018. The electrical and dielectric properties of the Au/Ti/HfO2/n-GaAs structures. Journal of Molecular Structure, 1157: 513-518.
  • Karatas S, Kara Z, 2011. Temperature dependent electrical and dielectric properties of Sn/p-Si metal–semiconductor (MS) structures. Microelectron. Reliab., 51: 2205–2209.
  • Kaya A, 2015. On the anomalous peak in the forward bias capacitance and conduction mechanism in the Au /n-4H SiC (MS) Schottky diodes (SDs) in the temperature range of 140–400 K. Int. J. Mod. Phys. B., 29: 1550010.
  • Kaya A, Alialy S, Demirezen S, Balbası M, Yeriskin SA, Aytimur A, 2016. The investigation of dielectric properties and ac conductivity of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors using impedance spectroscopy method. Ceram. Int., 42: 3322-3329.
  • Kocyigit A, Orak İ, Turut A, 2018. Temperature dependent dielectric properties of Au/ZnO/n-Si heterojuntion. Mater. Res. Express, 5: 035906.
  • Long RD, Hazeghi A, Gunji M, Nishi Y, McIntyre PC, 2012. Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN. Appl. Phys. Lett., 101: 241606.
  • Nicollian EH, Brews JR, 2003. MOS (metal oxide semiconductor) physics and technology, Wiley, New York, USA.
  • Orak I, Kocyigit A, Alındal S, 2017. Electrical and dielectric characterization of Au/ZnO/n Si device depending frequency and voltage. Chin. Phys. B, 26: 028102.
  • Raeissi B, Piscator J, Engström O, Hall S, Buiu O, Lemme MC, Gottlob HDB, Hurley PK, Cherkaoui K, Osten HJ, 2008. High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy. Solid-State Electronics, 52: 1274–1279.
  • Rhoderick EH, Williams RH, 1988. Metal-Semiconductor Contacts, second Ed. Oxford, Clarendon, England.
  • Sakthivel T, Kumar KA, Ramanathan R, Senthilselvan J, Jagannathan K, 2017. Silver doped TiO2 nano crystallites for dye-sensitized solar cell (DSSC) applications. Materials Research Express, 4: 126310.
  • Sekhar MC, Reddy NNK, Akkera HS, Reddy BP, Rajendar V, Uthanna S, Park SH, 2017. Role of interfacial oxide layer thickness and annealing temperature on structural and electronic properties of Al/Ta2O5/TiO2/Si metal–insulator–semiconductor structure. Journal of Alloys and Compounds, 718: 104-111.
  • Selçuk AB, Ocak SB, Aras FG, Orhan EO, 2014. Electrical Characteristics of Al/Poly(methyl methacrylate)/p-Si Schottky Device. Journal of Electronic Materials, 43: 3263–3269.
  • Sze SM, 1981. Physics of Semiconductor Devices, second Ed. Willey & Sons, NewYork, USA. 815 p.
  • Tataroğlu A, Yücedağ İ, Altindal Ş, 2008. Dielectric properties and ac electrical conductivity studies of MIS type Schottky diodes at high temperatures. Microelectronic Engineering, 85: 1518-1523.
  • Turut A, Karabulut A, Efeoglu H, 2017. Electrical characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures over a wide measurement temperature. Journal of Optoelectronıcs and Advanced Materıals, 19: 424-433.
  • Turut A, Karabulut A, Ejderha K, Bıyıklı N, 2015. Capacitance–conductance characteristics of Au/Ti/Al2O3/n-GaAs structures with very thin Al2O3 interfacial layer. Mater. Res. Express, 2: 046301.
  • Turut A, Karabulut A, Ejderha K, Bıyıklı N, 2015. Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures. Materials Science in Semiconductor Processing, 39: 400–407.
  • Yang L, Chao X, Liang P, Wei L, Yang Z, 2015. Electrical properties and high-temperaturedielectric relaxation behaviors of NaxBi(2−x)/3Cu3Ti4O12 ceramics. Mater. Res. Bull., 64: 216–222.
  • Ye PD, Wilk GD, Kwo J, Yang B, Gossmann HJL, Frei M, Chu SNG, Mannaerts JP, Sergent M, Hong M, Ng KK, Bude J, 2003. GaAs MOSFET with Oxide Gate Dielectric Grown by Atomic Layer Deposition. IEEE Electron Device Letters, 24: 209-211.
  • Yücedağ I, Kaya A, Altındal Ş, Uslu I, 2014. Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature. Chinese Physics B, 23: 047304.
  • Zeyrek S, Acaroğlu E, Altındal Ş, Birdoğan S, Bülbül MM, 2013. The effect of series resistance and interface states on the frequency dependent C–V and G/w–V characteristics of Al/perylene/p-Si MPS type Schottky barrier diodes. Current Applied Physics, 13: 1225-1230.

Dielectric Characterization of Si-Based Heterojunction with TiO2 Interfacial Layer

Yıl 2018, Cilt: 8 Sayı: 3, 119 - 129, 30.09.2018

Öz

In this study, Al/TiO2/p-Si/Al heterojunction is fabricated and investigated some electrical and dielectric

characteristics. Atomic layer deposition technique was used for synthesize of TiO2 interfacial layer due to the some

advantages such as uniformity and stability of surface. For determining electrical and dielectric characteristics,

impedance spectroscopy measurements were performed in range from -1 to +1 V bias voltages and 10 kHz-1MHz

frequency range at room temperature. As an electrical parameters, interface states distribution and series resistance

values was determined. In addition to these, it is found that the dielectric properties such as dielectric loss and

constant, real and imaginary parts of electric modulus, loss tangent and AC electric conductivity values was

depended on frequency and voltage strongly. The electrical and dielectric characteristics show that interface states

and polarization values of fabricated device can follow AC signal at low frequency values.

Kaynakça

  • Biyikli N, Karabulut A, Efeolu H, Guzeldir B, Turut A, 2014. Electrical characteristics of Au/Ti/n-GaAs contacts over a wide measurement temperature range. Physica Scripta, 89: 095804.
  • Dang VS, Parala H, Kim JH, Xu K, Srinivasan NB, Edengeiser E, Havenith M, Wieck AD, Arcos T, Fischer RA, Devi A, 2014. Electrical and optical properties of TiO2 thin films prepared by plasma‐enhanced atomic layer deposition. Phys. Status Solidi A, 211: 416-424. Cherif A, Jomni S, Mliki N, Beji L, 2013. Electrical and dielectric characteristics of Al/Dy2O3/p-Si heterostructure. Physica B: Condensed Matter, 429: 79-84.
  • Demirezen S, 2013. Frequency- and voltage-dependent dielectric properties and electrical conductivity of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes at room temperature. Appl. Phys. A. 112: 827–833.
  • Ge J, Chaker M, 2017. Oxygen Vacancies Control Transition of Resistive Switching Mode in Single-Crystal TiO2 Memory Device. ACS Appl. Mater. Interfaces, 9: 16327–16334.
  • Gozeh BA, Karabulut A, Yildiz A, Yakuphanoglu F, 2018. Solar light responsive ZnO nanoparticles adjusted using Cd and La Co-dopant photodetector. Journal of Alloys and Compounds, 732: 16-24.
  • Gupta R, Saikia D, Vaid R, 2017. Argon Annealed ALD-ZrO2/SiON Gate Stack for Advanced CMOS Devices. ECS Transactions, 77: 51-55.
  • Gyanan, Mondal S, Kumar A, 2016. Tunable dielectric properties of TiO2 thin film based MOS systems for application in microelectronics. Superlattices and Microstructures, 100: 876-885.
  • Kalygina VM, Egorova IS, Prudaev IA, Tolbanov OP, Atuchin VV, 2017. Conduction mechanism of metal-TiO2–Si structures. Chin. J. Phys. 55: 59-63.
  • Karabulut A, Orak İ, Türüt A, 2018. The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes. Solid State Electronics, 144: 39-48.
  • Karabulut A, Türüt A, Karataş Ş, 2018. The electrical and dielectric properties of the Au/Ti/HfO2/n-GaAs structures. Journal of Molecular Structure, 1157: 513-518.
  • Karatas S, Kara Z, 2011. Temperature dependent electrical and dielectric properties of Sn/p-Si metal–semiconductor (MS) structures. Microelectron. Reliab., 51: 2205–2209.
  • Kaya A, 2015. On the anomalous peak in the forward bias capacitance and conduction mechanism in the Au /n-4H SiC (MS) Schottky diodes (SDs) in the temperature range of 140–400 K. Int. J. Mod. Phys. B., 29: 1550010.
  • Kaya A, Alialy S, Demirezen S, Balbası M, Yeriskin SA, Aytimur A, 2016. The investigation of dielectric properties and ac conductivity of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors using impedance spectroscopy method. Ceram. Int., 42: 3322-3329.
  • Kocyigit A, Orak İ, Turut A, 2018. Temperature dependent dielectric properties of Au/ZnO/n-Si heterojuntion. Mater. Res. Express, 5: 035906.
  • Long RD, Hazeghi A, Gunji M, Nishi Y, McIntyre PC, 2012. Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN. Appl. Phys. Lett., 101: 241606.
  • Nicollian EH, Brews JR, 2003. MOS (metal oxide semiconductor) physics and technology, Wiley, New York, USA.
  • Orak I, Kocyigit A, Alındal S, 2017. Electrical and dielectric characterization of Au/ZnO/n Si device depending frequency and voltage. Chin. Phys. B, 26: 028102.
  • Raeissi B, Piscator J, Engström O, Hall S, Buiu O, Lemme MC, Gottlob HDB, Hurley PK, Cherkaoui K, Osten HJ, 2008. High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy. Solid-State Electronics, 52: 1274–1279.
  • Rhoderick EH, Williams RH, 1988. Metal-Semiconductor Contacts, second Ed. Oxford, Clarendon, England.
  • Sakthivel T, Kumar KA, Ramanathan R, Senthilselvan J, Jagannathan K, 2017. Silver doped TiO2 nano crystallites for dye-sensitized solar cell (DSSC) applications. Materials Research Express, 4: 126310.
  • Sekhar MC, Reddy NNK, Akkera HS, Reddy BP, Rajendar V, Uthanna S, Park SH, 2017. Role of interfacial oxide layer thickness and annealing temperature on structural and electronic properties of Al/Ta2O5/TiO2/Si metal–insulator–semiconductor structure. Journal of Alloys and Compounds, 718: 104-111.
  • Selçuk AB, Ocak SB, Aras FG, Orhan EO, 2014. Electrical Characteristics of Al/Poly(methyl methacrylate)/p-Si Schottky Device. Journal of Electronic Materials, 43: 3263–3269.
  • Sze SM, 1981. Physics of Semiconductor Devices, second Ed. Willey & Sons, NewYork, USA. 815 p.
  • Tataroğlu A, Yücedağ İ, Altindal Ş, 2008. Dielectric properties and ac electrical conductivity studies of MIS type Schottky diodes at high temperatures. Microelectronic Engineering, 85: 1518-1523.
  • Turut A, Karabulut A, Efeoglu H, 2017. Electrical characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures over a wide measurement temperature. Journal of Optoelectronıcs and Advanced Materıals, 19: 424-433.
  • Turut A, Karabulut A, Ejderha K, Bıyıklı N, 2015. Capacitance–conductance characteristics of Au/Ti/Al2O3/n-GaAs structures with very thin Al2O3 interfacial layer. Mater. Res. Express, 2: 046301.
  • Turut A, Karabulut A, Ejderha K, Bıyıklı N, 2015. Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures. Materials Science in Semiconductor Processing, 39: 400–407.
  • Yang L, Chao X, Liang P, Wei L, Yang Z, 2015. Electrical properties and high-temperaturedielectric relaxation behaviors of NaxBi(2−x)/3Cu3Ti4O12 ceramics. Mater. Res. Bull., 64: 216–222.
  • Ye PD, Wilk GD, Kwo J, Yang B, Gossmann HJL, Frei M, Chu SNG, Mannaerts JP, Sergent M, Hong M, Ng KK, Bude J, 2003. GaAs MOSFET with Oxide Gate Dielectric Grown by Atomic Layer Deposition. IEEE Electron Device Letters, 24: 209-211.
  • Yücedağ I, Kaya A, Altındal Ş, Uslu I, 2014. Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature. Chinese Physics B, 23: 047304.
  • Zeyrek S, Acaroğlu E, Altındal Ş, Birdoğan S, Bülbül MM, 2013. The effect of series resistance and interface states on the frequency dependent C–V and G/w–V characteristics of Al/perylene/p-Si MPS type Schottky barrier diodes. Current Applied Physics, 13: 1225-1230.
Toplam 31 adet kaynakça vardır.

Ayrıntılar

Birincil Dil İngilizce
Konular Metroloji,Uygulamalı ve Endüstriyel Fizik
Bölüm Elektrik Elektronik Mühendisliği / Electrical Electronic Engineering
Yazarlar

Abdulkerim Karabulut 0000-0003-1694-5458

Yayımlanma Tarihi 30 Eylül 2018
Gönderilme Tarihi 26 Nisan 2018
Kabul Tarihi 12 Haziran 2018
Yayımlandığı Sayı Yıl 2018 Cilt: 8 Sayı: 3

Kaynak Göster

APA Karabulut, A. (2018). Dielectric Characterization of Si-Based Heterojunction with TiO2 Interfacial Layer. Journal of the Institute of Science and Technology, 8(3), 119-129.
AMA Karabulut A. Dielectric Characterization of Si-Based Heterojunction with TiO2 Interfacial Layer. Iğdır Üniv. Fen Bil Enst. Der. Eylül 2018;8(3):119-129.
Chicago Karabulut, Abdulkerim. “Dielectric Characterization of Si-Based Heterojunction With TiO2 Interfacial Layer”. Journal of the Institute of Science and Technology 8, sy. 3 (Eylül 2018): 119-29.
EndNote Karabulut A (01 Eylül 2018) Dielectric Characterization of Si-Based Heterojunction with TiO2 Interfacial Layer. Journal of the Institute of Science and Technology 8 3 119–129.
IEEE A. Karabulut, “Dielectric Characterization of Si-Based Heterojunction with TiO2 Interfacial Layer”, Iğdır Üniv. Fen Bil Enst. Der., c. 8, sy. 3, ss. 119–129, 2018.
ISNAD Karabulut, Abdulkerim. “Dielectric Characterization of Si-Based Heterojunction With TiO2 Interfacial Layer”. Journal of the Institute of Science and Technology 8/3 (Eylül 2018), 119-129.
JAMA Karabulut A. Dielectric Characterization of Si-Based Heterojunction with TiO2 Interfacial Layer. Iğdır Üniv. Fen Bil Enst. Der. 2018;8:119–129.
MLA Karabulut, Abdulkerim. “Dielectric Characterization of Si-Based Heterojunction With TiO2 Interfacial Layer”. Journal of the Institute of Science and Technology, c. 8, sy. 3, 2018, ss. 119-2.
Vancouver Karabulut A. Dielectric Characterization of Si-Based Heterojunction with TiO2 Interfacial Layer. Iğdır Üniv. Fen Bil Enst. Der. 2018;8(3):119-2.